高効率エネルギー利用に向けた半導体材料・デバイスの研究
半導体デバイスとそれによる集積回路は我々の生活を支えるあらゆる電子機器に不可欠です。半導体中の電子ダイナミクス研究を基軸として、その更なる高性能化と高効率なエネルギー利用に向けて理論、実験の両面から研究を行っています。
工学部
電気電子工学科
電気電子工学専攻(修士課程)
准教授
博士
村口 正和
( ムラグチ マサカズ )
学位
博士(工学):早稲田大学:2007年
研究分野
電子デバイス/材料物性/電子ダイナミクス
キーワード
電子ダイナミクス/高効率エネルギー利用/半導体工学/デバイスシミュレーション/第一原理計算/分子線ビームエピタキシャル法/化合物半導体/結晶成長/ナノエレクトロニクス/パワーエレクトロニクス
学会・社会活動等
日本物理学会/応用物理学会
エピソード
地球環境を保全し、持続可能な発展を続けるためには、多くのエネルギーを消費する電子機器の高効率化が不可欠です。一方で、電子機器の中枢を担う集積回路の基本素子は、集積度を上げていく中で、すでに数十ナノメートルにまで微細化されており、素子の特性ばらつきやリーク電流の増大など様々な課題が生じています。電子機器の更なる省エネ化と性能向上を両立してくためには、従来の発想を超えた設計手法・製造手法や、さらには新たな構造や原理に基づくデバイスが求められています。
研究・学術活動
- 論文(29件)
- 会議論文(65件)
- 紀要(0件)
- 講演(44件)
- 著書(0件)
- 作品(0件)
- 受賞(0件)
- その他(0件)
著者 | タイトル | 発行元 | 巻 | 号 | ページ | 発表年月日 |
---|---|---|---|---|---|---|
Kazuki Itoh Masakazu Muraguchi, and Tetsuo Endoh | Integrated voltage regulators with high-side NMOS power switch and dedicated bootstrap driver using vertical body channel MOSFET under 100 MHz switching frequency for compact system and efficiency enhancement | Japanese Journal of Applied Physics | 56 | 4S | 04CF14-1~04CF14-7 | 2017/ |
H. Honjo, S. Ikeda, H. Sato, S. Sato, T. Watanabe, S. Miura, T. Nasuno, Y. Noguchi,M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno, and T. Endoh | Improvement of thermal tolerance of CoFeB-MgO perpendicular-anisotropy magnetic tunnel junctions by controlling boron composition | IEEE. Trans. on Mag. | 52 | 7 | 3401104-1~3401104-4 | 2016/ |
Kunihiro Tsubomi, Masakazu Muraguchi and Tetsuo Endoh | Novel current collapse mode induced by source leakage current in AlGaN/GaN high-electron-mobility transistors and its impact | Japanese Journal of Applied Physics | 55 | 8S2 | 08PD06-1~08PD06-5 | 2016/ |
Takuya Imamoto, Yitao Ma, Masakazu Muraguchi, and Tetsuo Endoh | Low-Frequency Noise Reduction in Vertical MOSFETs Having Tunable Threshold Voltage Fabricated with 60 nm CMOS Technology on 300 mm Wafer Process | Japanese Journal of Applied Physics | 54 | 4S | 04DC11-1~04DC11-8 | 2015/ |
Takeshi Sasaki, Masakazu Muraguchi, Moon-Sik Seo, Sung-kye Park, Tetsuo Endoh | Effect with High Density Nano Dot Type Storage Layer Structure on 20nm Planar NAND Flash Memory Characteristics | Japanese Journal of Applied Physics | 53 | 4S | 4ED17-1~04ED17-8 | 2014/ |
Masakazu Muraguchi and Tetsuo Endoh | Size dependence of electrostatic lens effect in vertical MOSFETs | Japanese Journal of Applied Physics | 52 | 4S | 04EJ09-1~04EJ09-4 | 2014/ |
Taro Shiokawa, Genki Fujita, Yukihiro Takada, Satoru Konabe, Masakazu Muraguchi, Takahiro Yamamoto, Tetsuo Endoh, Yasuhiro Hatsugai, Kenji Shiraishi | Influence of Coulomb Blockade on Wave Packet Dynamics in Nanoscale Structures | Japanese Journal of Applied Physics | 52 | 4S | 04CJ06-1~04CJ06-4 | 2013/ |
M. Arikawa, M. Muraguchi, Y. Hatsugai, K. Shiraishi, T. Endoh | Role of Synthetic Ferrimagnets in Magnetic Tunnel Jnctions from Wave Packet Dynamics | Japanese Journal of Applied Physics | 51 | 2 | 02BM03-1~02BM03-4 | 2012/ |
Y. Takada, Y. T. Yoon, T. Shiokawa, S. Konabe, M. Arikawa, M. Muraguchi, T. Endoh, Y. Hatsugai, K. Shiraishi | Multi Electron Wave Packet Dynamics in Applied Electric Fields | Japanese Journal of Applied Physics | 51 | 2 | 02BJ01-1~02BJ01-5 | 2012/ |
Y. Takada, M. Muraguchi, T. Endoh, S. Nomura, K. Shiraishi | Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact | Key Engineering Materials | 470 | 43-47 | 2011/ | |
T. Endoh, M. Kamiyanagi, M. Muraguchi, T. Imamoto, T. Sasaki | The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-Speed Operation | IEICE Transacions on Electronics | E94-C | 5 | 743-750 | 2011/ |
M. Muraguchi, T. Endoh | Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET | IEICE Transacions on Electronics | E94-C | 5 | 737-742 | 2011/ |
M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, and T. Endoh | Collective Tunneling Model in Charge Trap Type NVM Cell | Japanese Journal of Applied Physics | 50 | 4S | 04DD04-1~04DD04-4 | 2011/ |
M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, and T. Endoh | Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure | Key Engineering Materials | 470 | 48-53 | 2011/ | |
M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y Shigeta, and T. Endoh | Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor | IEICE Transacions on Electronics | E94-C | 5 | 730-736 | 2011/ |
Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki | Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots | Physica E | 42 | 4 | 918-921 | 2010/ |
K. Sugiyama, T. Okunishi, M. Muraguchi, K. Takeda | Electron resonant tunneling through a circle-ring multi-component quantum system | Physical Review B | 81 | 115309-1~115309-14 | 2010/ | |
Y. Takada, M. Muraguchi, T. Endoh, S. Nomura, K. Shiraishi | Proposal of a new physical model for Ohmic contacts | Physica E | 42 | 4 | 2837-2840 | 2010/ |
Y. Sakurai, J. I. Iwata, M. Muraguchi, Y. Shigeta, Y.Takada, S. Nomura, T. Endoh, S. Saito, K. Shiraishi1, M. Ikeda, K. Makihara, S. Miyazaki | Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots | Japanese Journal of Applied Physics | 49 | 1R | 014001-1~014001-4 | 2010/ |
M. Muraguchi, Y. Takada, S. Nomura, T. Endoh, Kenji Shiraishi | Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot | IEICE Transactions on Electronics | E93-C | 5 | 563-568 | 2010/ |
M. Muraguchi, T. Endoh | Study on Quantum Electron-Dynamics in Vertical MOSFET | IEICE Transacions on Electronics | E93-C | 5 | 552-556 | 2010/ |
M. Muraguchi, T. Endoh, Y. Takada, Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y. Shigeta | Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices | Physica E | 42 | 4 | 2602-2605 | 2010/ |
M. Muraguchi, K. Shiraishi, K. Takeda | Theoretical study of the time-dependent phenomenon of photon assisted tunneling through a charged quantum dot | Journal of Physics: Condensed Matter | 21 | 6 | 064230-1~064230-5 | 2009/ |
Y .Takada, M. Muraguchi, and K. Shiraishi | Quantum Cascade Multi-electron Injection into Si-Quantum-Dot Floating Gates Embedded in SiO2 Matrices | Applied Surface Science | 254 | 6199-6202 | 2008/ | |
M. Muraguchi, Y. Takada, S. Nomura, and K. Shiraishi | Theoretical study of the time-dependent phenomena on a two-dimensional electron gas weakly coupled with a discrete level | Japanese Journal of Applied Physics | 47 | 10 | 7807-7811 | 2008/ |
T. Okunishi, Y. Ohtsuka, M. Muraguchi, K. Takeda | Interstate interference of electron wave packet tunneling through a quantum ring | Physical Review B | 75 | 24 | 245314-1~245314-15 | 2007/ |
M. Muraguchi, K. Takeda | First-Principles Study on Time-dependent Phenomena in Photon-Assisted Tunneling I: An Electron Injected into 2D Lozenge Quantum Dot | Japanese Journal of Applied Physics | 46 | 3A | 1224-1235 | 2007/ |
T. Koiso, M. Muraguchi, N. Watanabe, K. Takeda | Time-dependent Ballistic Phenomena of Electron Injected into Half-Ellipse Confined Room | Japanese Journal of Applied Physics | 44 | 6A | 4252-4268. | 2005/ |
M. Muraguchi, T. Koiso, Y. Asari, K. Takeda | Theoretical study on quantum phenomena of an electron wave packet injected into various potential walls | TOWARDS THE CONTROLLABLE QUANTUM STATES, (2003) | 475-480 | 2003/ |
著者 | タイトル | 発行元 | 巻 | 号 | ページ | 発表年月日 |
---|---|---|---|---|---|---|
H. Honjo, S. Ikeda, H. Sato, K. Nishioka, T. Watanabe, S. Miura, T. Nasuno, H. Inoue, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, H. Ohno, T. Endoh | High thermal tolerance synthetic ferrimagnetic reference layer with modified buffer layer by ion irradiation for perpendicular anisotropy magnetic tunnel junctions | 2018 IEEE International Magnetics Conference (INTERMAG) | HC-05 | 2018/4 | ||
S.Ohuchida, K.Ito, M.Muraguchi and T.Endoh | New Model of Switching Delay Induced by Modulation Effect of Damping and STT Pumping Balance With Programing Current and Interference Phenomena in P-MTJ Array | Intenational Conference on Solid State Devices and Materials | G-3-04 | 2016/9 | ||
K.Itoh, M.Muraguchi and T.Endoh | Novel Integrated Voltage Regulators with High-Side NMOS Power Switch and Dedicated Bootstrap Driver Using Vertical MOSFET for Efficiency Enhancement | Intenational Conference on Solid State Devices and Materials | PS-5-01 | 2016/9 | ||
Kazuki Itoh, Masakazu Muraguchi, Tetsuo Endoh | High accurate and low loss current sensing method with novel current path narrowing method for DC-DC converters and its demonstration | 2016 IEEE International Telecommunications Energy Conference | 1-6 | 2016/7 | ||
S. Ohuchida, M. Murauchi, K. Itoh and T. Endoh | Increase of Critical Switching Current Density of 10 nm p-MTJ in 4F^2 Cell Array Due to Inter-cell Interference Phenomenon | 13th Joint MMM- Intermag Conference | GV-01 | 2016/1 | ||
H. Honjo, H. Sato, S. Ikeda, S. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M.Yasuhira, T.Tanigawa, H.Koike, M.Muraguchi, M.Niwa, K.Ito, H.Ohno and T.Endoh | Optimum boron concentration difference between single and double CoFeB/MgO interface perpendicular MTJs with high thermal tolerance and its mechanism | 13th Joint MMM- Intermag Conference | FB-06 | 2016/1 | ||
S. Ohuchida, M. Murauchi, K. Itoh and T. Endoh | Increase of Critical Switching Current Density of 10 nm p-MTJ in 4F2 Cell Array Due to Inter-cell Interference Phenomenon | 13th Joint MMM-Intermag Conference | GV-01 | 2016/1 | ||
K. Tsubomi, M. Muraguchi and T. Endoh | Novel Current Collapse Mode Induced by Source Leakage Current in AlGaN/GaN HEMTs | International Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology | S4-2 83 - 84 | 2015/11 | ||
S. Ohuchida, K. Itoh, M. Muraguchi, T. Endoh | 10nm p-MTJ array design for suppressing switching delay induced by interference due to magnetic dipole interaction for high density STT-MRAM | International Conference on Solid State Devices and Materials | O-5-2 | 2015/9 | ||
M. Muraguchi and T. Endoh | Novel Design of Electrostatic Lens Potential for Improving Bending Curvature and Transmission Probability of Drive Current for Vertical Body Channel MOSFET | International Conference on Solid State Devices and Materials | PS-9-9 | 2015/9 | ||
Taro Sasaki, Masakazu Muraguchi, Takahiro Shinada and Tetsuo Endoh | A Study of Strain Profile in Channel Region of Vertical MOSFET for Improving Drivability | Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices | 1A-2 | 2015/7 | ||
Kazuki Itoh, Masakazu Muraguchi, Tetsuo Endoh | Switch Toggling Technique of Parallel MOSFET Topology for Power Electronics Circuits with Uniform Thermal Distribution | Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices | 4B-3 | 2015/7 | ||
Masakazu Muraguchi and Tetsuo Endoh | Channel Length Dependence of Electrostatic Lens Effect in Vertical Body Channel MOSFET | Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices | 1A-4 | 2015/7 | ||
H. Honjo, H. Sato, S. Ikeda, S. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, H. Koike, M. Muraguchi, M. Niwa, K. Ito, H. Ohno and T. Endoh | 10 nmφ perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400℃ high thermal tolerance by boron diffusion control | Symposium on VLSI Technology | 12-2 | 2015/6 | ||
H. Koike, S. Miura, H. Honjo, T. Watanabe, H. Sato, S. Sato,T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, M. Muraguchi, M. Niwa, K. Ito, S. Ikeda, H. Ohno, and T. Endoh | 1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator for Improving Device Variation Tolerance | International Memory Workshop | Session 6-3 | 2015/5 | ||
G. Fujita, T. Shiokawa, Y. Takada, S. Konabe, M, Muraguchi, T. Yamamoto, T. Endoh, Y. Hatsugai and K. Shiraishi | Electric Field Effects in Multi-Electron Wave Packet Dynamics in Nano Channels | The IUMRS International Conference in Asia | D5-P26-008 | 2014/12 | ||
T. Shiokawa, G. Fujita, Y. Takada, S. Konabe, M. Muraguchi, T. Yamamoto, T. Endoh, Y. Hatsugai and K. Shiraishi | Coulomb Interaction on Multi-electron Wave Packet Dynamics in Nanoscale channels | 44th IEEE Semiconductor Interface Specialists Conference | 11.12 | 2013/12 | ||
G. Fujita, T. Shiokawa, Y. Takada, S. Konabe, M. Muraguchi, T. Yamamoto, T. Endoh, Y. Hatsugai and K. Shiraishi | Effect of Electric Field in Multi-Electron Wave Packet Dynamics in Channel of Nanoscale devices | International Symposium on Advanced Nanodevices and Nanotechnology | PII-4 | 2013/12 | ||
Taro Shiokawa, Genki Fujita, Yukihiro Takada, Satoru Konabe, Masakazu Muraguchi, Takahiro Yamamoto, Tetsuo Endoh, Yasuhiro Hatsugai, and Kenji Shiraishi | Multi-Electron Wave Packets Dynamics under MOSFET-like Potentials | International Symposium on Advanced Nanodevices and Nanotechnology | Thu1-2 | 2013/12 | ||
Takeshi Sasaki , Masakazu Muraguchi, Moon-Sik Seo, Sung-Kye Park, Tetsuo Endoh | Effect with Nano Dot Type Storage Layer Structure on Channel Region in 20nm Planar NAND Flash Memory Cell | International Conference on Solid State Devices and Materials | PS-4-5 | 2013/9 | ||
G. Fujita, T. Shiokawa, Y. Takada, S. Konabe, M. Muraguchi, T. Yamamoto, T. Endoh, Y. Hatsugai, K. Shiraishi | Dynamical Coulomb Blockade in Multi-Electron Wave Packet Dynamics in Nanostructures | International Conference on Solid State Devices and Materials | E-2-4 | 2013/9 | ||
T. Shiokawa, G. Fujita, Y. Takada, S. Konabe, M. Muraguchi, T. Yamamoto, T. Endoh, Y. Hatsugai, K. Shiraishi | Multi-electron Wave Packet Dynamics in Nanoscale Devices | International Conference on Solid State Devices and Materials | D-3-3 | 2013/9 | ||
M. Muraguchi, T. Endoh | Size Dependence of Electrostatic Lens Effect in Vertical Pillar Type MOSFET | International Conference on Solid State Devices and Materials | E-2-3 | 2013/9 | ||
Y. Yoshida, H. Koike, M. Muraguchi1, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh | A Model Reflecting Preheat Effect by Two-step Writing Technique for High Speed and Stable STT-MRAM | Proceeding of 16th International Workshop on Computational Electronics | 248-249 | 2013/6 | ||
A. Itagaki, M. Muraguchi and T. Endoh | Intrinsic Region Length Dependence of Vertical Double Gate IMOS | Proceeding of 16th International Workshop on Computational Electronics | 190-191 | 2013/6 | ||
T. Shiokawa, Y. Takada, S. Konabe, M. Muraguchi, T. Endoh, Y. Hatsugai, K. Shiraishi | Effect of Coulomb Interaction in Electron Wave Packet Dynamics in Nanoscale Devices | International Conference on Solid State Devices and Materials | PS9-2 | 2012/9 | ||
Yukihiro Takada, Young Taek Yoon, Taro Shiokawa, Satoru Konabe, Mitsuhiro Arikawa, Masakazu Muraguchi, Tetsuo Endoh, Yasuhiro Hatsugai, Kenji Shiraishi | Effectiveness of Time-Dependent Hartree-Fock Approaches for Multi-Electron Wave Packet Dynamics in Nanoscale Structures | International Conference on the Physics of Semiconductors | 37.14 | 2012/7 | ||
Taro Shiokawa, Yukihiro Takada, Young Taek Yoon, Satoru Konabe, Masakazu Muraguchi, Mitsuhiro Arikawa, Tetsuo Endoh, Yasuhiro Hatsugai, Kenji Shiraishi | The Effect of Coulomb Interaction in Multi-Electron Wave Packet Dynamics | International Conference on the Physics of Semiconductors | 67.32 | 2012/7 | ||
Taro Shiokawa, Yukihiro Takada, Young Taek Yoon, Satoru Konabe, Masakazu Muraguchi, Mitsuhiro Arikawa, Tetsuo Endoh, Yasuhiro Hatsugai, Kenji Shiraishi | Applied Electric Field Dependence of Multi-Electron Wave Packet Dynamics | The Eighth International Nanotechnology Conference on Communication and Cooperation 2012 | Tu114 | 2012/ | ||
M. Arikawa, M. Muraguchi, Y. Hatsugai, K. Shiraishi, and T. Endoh | Role of Synthetic Ferrimagnets in MTJs from Wave Packet Dynamics | International Conference on Solid State Devices and Materials | N-8-6 | 2011/9 | ||
Y. Takada, Y. T. Yoon, T. Shiokawa, S. Konabe, M. Arikawa, M. Muraguchi, T. Endoh, Y. Hatsugai, and K. Shiraishi | Electron dynamics in the nano scale transistor | Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices | 3A-4 | 2011/6 | ||
M. Muraguchi and T. Endoh | Theoretical study on current path control by electrostatic lens effect in vertical MOSFET | Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices | 1A-8 | 2011/6 | ||
Y. Takada, M. Muraguchi, T. Endoh, S. Nomura, K. Shiraishi | Proposal of a new electronic structure model of Ohmic contacts for the future metallic source and drain | 10th International Workshop on Junction Technology | 78-81 | 2010/11 | ||
Y. Takada, Y. T. Yoon, T. Shiokawa, S. Konabe, M. Arikawa, M. Muraguchi, T. Endoh, Y. Hatsugai, and K. Shiraishi | Multi Electron Wave Packet Dynamics in Applied Electric Fields | International Conference on. Solid State Devices and Materials | J-4-1 | 2010/9 | ||
M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, and T. Endoh | Collective Tunneling Model in Charge Trap Type NVM Cell | International Conference on Solid State Devices and Materials | E-3-2 | 2010/9 | ||
M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, K. Makihara, M. Ikeda, S. Miyazaki, Y. Shigeta, and T. Endoh | Collective Tunneling Model between Two-Dimensional Electron Gas to Si-Nano Dot | International Conference on the Physics of Semiconductors | Th-P2-105 | 2010/7 | ||
T. Endoh, M. Kamiyanagi, M. Muraguchi, T. Imamoto, T. Sasaki | The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation | Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices | 7B-1 | 2010/6 | ||
M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi,, M. Ikeda, K. Makihara, S. Miyazaki, Y Shigeta, and T. Endoh | Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor | Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices | 9B-4 | 2010/6 | ||
M. Muraguchi, T. Endoh | Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET | Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices | 9B-2 | 2010/6 | ||
Y. Takada, M. Muraguchi, T. Endoh, S. Nomura, and K. Shiraishi | Investigation of I-V characteristics in a new electronic structure model of the Ohmic contact for future nano-scale Ohmic contact | International Symposium on Technology Evolution for Silicon Nano-Electronics | P-20 | 2010/5 | ||
M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi and T. Endoh | Bias Voltage Sweep Speed Dependence of Electron Injection in Si-Nano-Dots Floating Gate MOS Capacitor | International Meeting for Future of Electron Devices, Kansai | B-2 | 2010/5 | ||
M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi and T. Endoh | Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure | International Symposium on Technology Evolution for Silicon Nano-Electronics | P-38 | 2010/5 | ||
Y. Takada, M. Muraguchi, T. Endoh, S. Nomura, K. Shiraishi | Investigation of the new physical model of Ohmic contact for future nano-scale contacts | 217th ECS Meeting | 923 | 2010/4 | ||
Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi , M. Muraguchi, T. Endoh , M. Ikeda, K. Makihara and S. Miyazaki | Electron Tunneling between Si Quantum dots and Tow Dimensional Electron Gas under Optical Excitation at Low Temperatures | 217th ECS Meeting | 962 | 2010/4 | ||
S. Nomura, Y. Sakurai, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, M. Ikeda, K. Makihara and S. Miyazaki | Physics of Nano-contact between Si Quantum Dots and Inversion Layer | 216th ECS Meeting | E10 | 2009/10 | ||
M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi and T. Endoh | New Tunneling Model with Dependency of Temperature Measured in Si Nano-Dot Floating Gate MOS Capacitor | International Conference on Solid State Devices and Materials | K-2-1 | 2009/9 | ||
Y. Takada, M. Muraguchi, T. Endoh, S. Nomura, K. Shiraishi | Proposal of a new physical model for Ohmic contacts | 18th Electronic Properties of Two-Dimensional Systems, 14th Modulated Semiconductor Structures | Th-mP32 | 2009/7 | ||
Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta,M.Ikeda, K. Makihara, S Miyazaki | Anomalous temperature dependence of electron tunneling | 18th Electronic Properties of Two-Dimensional Systems, 14th Modulated Semiconductor Structures | Mo-eP49 | 2009/7 | ||
M. Muraguchi, T. Endoh, Y. Takada, Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y. Shigeta | Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices | 18th Electronic Properties of Two-Dimensional Systems, 14th Modulated Semiconductor Structures | Tu-mP22 | 2009/7 | ||
Masakazu Muraguchi, Tetsuo Endoh | Study on Quantum Electro-Dynamics in Vertical MOSFET | 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices | 2B.10, 24-26 | 2009/6 | ||
Masakazu Muraguchi, Yukihiro Takada, Shintaro Nomura, Testuo Endoh, and Kenji Shiraishi | Importance of Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot | 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices | 3A.8, 24-26 | 2009/6 | ||
Tetsuo Endoh, Kazuhiro Suzuki, Masashi Kamiyanagi, Masakazu Muraguchi | Study of Stability of MOS Current Mode Logic NAND Circuit on Input Timing Fluctuation | The 2009 International Meeting for Future of Electron Devices, Kansai | C-3,58-59 | 2009/5 | ||
Masakazu Muraguchi, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi, Tetsuo Endoh | Study of Electronic State in Electrode for Nano-Electronic Devices | The 2009 International Meeting for Future of Electron Devices, Kansai | B-5, 46-47 | 2009/5 | ||
Shintaro Nomura, Yoko Sakurai, Yukihiro Takada, Masakazu Muraguchi, Tetsuo Endoh, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, and Kenji Shiraishi | Capacitance measurements on quantum dots coupled to a two-dimensional electron system | 13th Advanced Heterostructures and Nanostructures Workshop | Quantum Dot I -5 | 2008/12 | ||
Masakazu Muraguchi, Yukihiro Takada, Yoko Sakurai, Tetsuo Endoh, Shintaro Nomura, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, and Kenji Shiraishi | Theoretical investigation of quantum dot coupled to a two-dimensional electron system | 13th Advanced Heterostructures and Nanostructures Workshop | Quantum Dot I -4 | 2008/12 | ||
Y. Takada, M. Muraguchi, S. Nomura, and K. Shiraishi | Theoretical Studies of Coupled Quantum Dot System with a Two-dimensional Electron Gas in the Magnetic Fields | International conference on Low Temperature Physics | PD-Fr260 | 2008/8 | ||
M. Muraguchi, Y. Takada, S. Nomura, and K. Shiraishi | Theoretical Study of the Electron Dynamics of a Quantum Wire Coupled with the Quantum Dots | International conference on Low Temperature Physics | PD-Th254 | 2008/8 | ||
Y. Takada, M. Muraguchi, S. Nomura, and K. Shiraishi | Tunable Interaction between the Two-dimensional Electron Gas and an Isolated Level by the Magnetic Field | International Conference on the Physics of Semiconductors | Th-PD1-051 | 2008/7 | ||
M. Muraguchi, Y. Takada, S. Nomura, and K. Shiraishi | Theoretical Study on Electron Dynamics for a Two-dimensional Electron Gas Coupled with a Quantum Dot | International Conference on the Physics of Semiconductors | Th-PD1-066 | 2008/7 | ||
M. Muraguchi, T. Okunishi, K. Shiraishi, K. Takeda | Theoretical Study on Time-dependent Phenomena of Photon-Assisted Tunneling through Charged Quantum Dot | International Conference on Quantum Simulators and Design | PB-54 | 2008/5 | ||
Y. Takada, M. Muraguchi, and K. Shiraishi | Quantum Cascade Multi-electron Injection into Si-Quantum-Dot Floating Gate Embedded in SiO2 Matrix | International Symposium on Control of Semiconductor Interfaces | OB1-4 | 2007/11 | ||
T. Okunishi, M. Muraguchi, K. Takeda | Orbital Interference of an Electron Wave Packet Tunneling through the 2D Quantum Ring | International Conference on Quantum Simulators and Design | P-54 | 2006/12 | ||
M. Muraguchi, K. Takeda | First-Principles Study on Time-Dependent Phenomena in Photon-Assisted Tunneling: Electrons Injected into 2D Lozenge Quantum Dot | International Conference on Quantum Simulators and Design | P-53 | 2006/12 | ||
M. Muraguchi, Y. Otuka, T. Satake, Y. Asari, and K. Takeda | Dynamical Quantum Properties of Electrons Controlled by Time-Dependent External Field | Material Research Society Fall Meeting | P13.27 | 2005/11 | ||
M. Muraguchi, T. Koiso, Y. Asari, and K. Takeda | Theoretical study on quantum phenomena of an electron wave packet injected into various potential walls | International Symposium on Mesoscopic Superconductivity and Spintronics | P17 | 2002/3 |
著者 | タイトル | 発行元 | 巻 | 号 | ページ | 発表年月日 |
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著者 | タイトル | 発行元 | 巻 | 号 | ページ | 発表年月日 |
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藤田弦暉,塩川太郎,高田幸宏,小鍋哲,村口正和,山本貴博,遠藤哲郎, 初貝安弘, 白石賢二 | スピン自由度を考慮した多電子波束ダイナミクスにおける電子間相互作用の効果 | 日本物理学会年次大会 | 26pXQ-3 | 2014/9 | ||
塩川太郎,藤田弦暉,高田幸宏,小鍋哲,村口正和,山本貴博,遠藤哲郎,初貝安弘,白石賢二 | スピン自由度を考慮した多電子波束ダイナミクスにおける電子間相互作用の効果 | 日本物理学会年次大会 | 26pXQ-4 | 2014/9 | ||
藤田弦暉, 塩川太郎, 高田幸宏, 小鍋哲, 村口正和,山本貴博,遠藤哲郎,初貝安弘,白石賢二 | ナノ構造中における電子輸送の理論的研究 | SDM研究会 | SDM2014-53 | 2014/9 | ||
藤田弦暉, 塩川太郎, 高田幸宏, 小鍋哲, 村口正和,山本貴博,遠藤哲郎,初貝安弘,白石賢二 | ナノ構造中における電子輸送の理論的研究 | 日本物理学会秋季大会 | 8aAV-2 | 2014/9 | ||
藤田弦暉,塩川太郎,高田幸宏,小鍋哲,村口正和,山本貴博,遠藤哲郎,初貝安弘,白石賢二 | ナノ構造中の多電子波束ダイナミクスにおける電子間相互作用の効果 | 日本物理学会秋季大会 | 21aFB-9 | 2013/9 | ||
塩川太郎,藤田弦暉,高田幸宏,小鍋哲,村口正和,山本貴博,遠藤哲郎,初貝安弘,白石賢二 | 一次元非一様ポテンシャル中の波束ダイナミクス | 日本物理学会秋季大会 | 21aFB-10 | 2013/9 | ||
塩川太郎、髙田幸宏、尹永択、岩田潤一、小鍋哲、有川晃弘、村口正和、遠藤哲郎、初貝安弘、白石賢二 | 半導体ナノ構造における多電子波束ダイナミクスの印加電圧依存性 | 日本物理学会2012年年次大会 | 27pCE-4 | 2012/3 | ||
高田幸宏, 塩川太郎, 尹永択、岩田潤一、小鍋哲、有川晃弘、村口正和、遠藤哲郎、初貝安弘、白石賢二 | 2次元半導体ナノ構造における多電子波束ダイナミクスの検討 | 日本物理学会2012年年次大会 | 26pCJ-8 | 2012/3 | ||
尹永択, 塩川太郎, 高田幸宏, 岩田潤一, 小鍋哲, 有川晃弘, 村口正和, 遠藤哲郎, 初貝安弘, 白石賢二 | Suzuki-Trotter法による電子波束ダイナミックスの多体効果 | 日本物理学会2011年秋季大会 | 21aTM1 | 2011/9 | ||
塩川太郎, 高田幸宏, 尹永択, 岩田潤一, 小鍋哲, 有川晃弘, 村口正和, 遠藤哲郎, 初貝安弘, 白石賢二 | ハートリーフォック近似によるナノ構造中の電子波束ダイナミックス | 日本物理学会2011年秋季大会 | 21aTM2 | 2011/9 | ||
高田幸宏,尹永択,塩川太郎,岩田潤一,小鍋哲,有川晃弘,村口正和,遠藤哲郎,初貝安弘,白石賢二 | 半導体中での波束ダイナミクスの印加電圧依存性 | 日本物理学会2011年秋季大会 | 21aTM3 | 2011/9 | ||
A. Wang, K. Tanaka, M. Arikawa, M. Muraguchi, T. Endoh | Size Effect of Self-Heating in Vertical MOSFET | 2011電気関係学会東北支部連合大会 | 1A01 | 2011/8 | ||
村口正和, 遠藤哲郎 | 縦型構造MOSFETおよびFINFETにおける10nmチャネル領域への電子注入に及ぼす不純物位置効果 | 第71回応用物理学会学術講演会 | 14aZE-13 | 2010/9 | ||
村口正和, 遠藤哲郎 | 縦型構造MOSFETおよびFINFETにおける10nmチャネル領域への電子注入過程の研究 | 2010 電気関係学会東北支部連合大会 | 1I07 | 2010/8 | ||
村口正和,高田幸宏,櫻井蓉子,野村晋太郎,白石賢二,牧原克典,池田弥央,宮崎誠一,重田育照,遠藤哲郎 | 2次元電子ガス−量子ドット界面における電子トンネル過程に対する微視的考察 | 日本物理学会第65回年次大会 | 21aHV-3 | 2010/3 | ||
佐々木健志, 今本拓也, 村口正和, 遠藤哲郎 | High-k絶縁膜/Poly-SiゲートおよびMetalゲート電極を有するn型MOSFETのカットオフ特性の評価 | 第70回応用物理学会学術講演会 | 10a-TA-10 | 2009/9 | ||
今本拓也, 佐々木健志, 村口正和, 遠藤哲郎 | poly-Si及び金属ゲート電極を有するhigh-k絶縁膜系p型MOSFETのカットオフ特性 | 第70回応用物理学会学術講演会 | 10a-TA-9 | 2009/9 | ||
高田幸宏, 村口正和, 遠藤哲郎, 野村晋太郎, 白石賢二 | 将来のナノコンタクトを目指したオーミック接触の再考 | 第70回応用物理学会学術講演会 | 10p-TG-17 | 2009/9 | ||
櫻井蓉子, 高田幸宏, 野村晋太郎, 白石賢二,村口正和, 遠藤哲郎, 池田弥央, 牧原克典, 宮崎誠一 | 光励起下における電子ガス−量子ドット結合系のC-V特性とI-V特性 | 日本物理学会2009年秋季大会 | 26aXG-13 | 2009/9 | ||
多川知希, 武田京三郎, 村口正和, 遠藤哲郎 | 量子ドットに閉じ込められた電子−電子,電子−正孔対の第一原理動力学 | 日本物理学会2009年秋季大会 | 25pPSB-7 | 2009/9 | ||
村口正和, 遠藤哲郎 | 量子電子動力学に基づく縦型構造MOSFETの 駆動電流特性に対する理論的考察 | 第70回応用物理学会学術講演会 | 11a-TH-1 | 2009/9 | ||
村口正和, 遠藤哲郎, 杉山功太, 多川知希, 奧西拓馬, 武田京三郎 | 円−リング複合型量子ドットにおけるFloquet状態 | 日本物理学会2009年秋季大会 | 25pPSB-6 | 2009/9 | ||
村口正和, 遠藤哲郎 | 縦型構造MOSFETにおけるチャネル中への電子注入過程に対する理論的研究 | 電気関係学会東北支部連合大会 | 1D04 | 2009/8 | ||
高田幸宏、櫻井蓉子、村口正和、池田弥央、牧原克典、宮崎誠一、遠藤哲郎、野村晋太郎、白石賢二 | 電子ガス−量子ドット結合系における電子構造Ⅱ | 日本物理学会春季大会 | 30pTX-1 | 2009/3 | ||
櫻井蓉子,野村晋太郎,高田幸宏,白石賢二,村口正和,遠藤哲郎,池田弥央,牧原克典,宮崎誠一 | 電子ガス−量子ドット結合系におけるC-V特性およびI-V特性のSweep Rate依存性 | 日本物理学会春季大会 | 30pTX-2 | 2009/3 | ||
櫻井蓉子,野村晋太郎,白石賢二,村口正和,遠藤哲郎,池田弥央,牧原克典,宮崎誠一 | Si量子ドットフローティングゲートMOSキャパシタにおける過渡電流特性 | 第56回応用物理学関係連合講演会 | 2p-V-6 | 2009/3 | ||
野村晋太郎,櫻井蓉子,高田幸宏,白石賢二,村口正和,遠藤哲郎,池田弥央,牧原克典,宮崎誠一 | 電子励起状態を介した量子ドットへのトンネル現象の変調 | 第56回応用物理学関係連合講演会 | 1p-D-5 | 2009/3 | ||
村口正和, 遠藤哲郎, 櫻井蓉子, 野村晋太郎, 高田幸宏, 白石賢二, 池田弥央, 牧原克典, 宮崎誠一, 斉藤慎一 | 電子ガス−量子ドット結合系における電子ダイナミクスII | 日本物理学会春季大会 | 30pTX-3 | 2009/3 | ||
村口正和,遠藤哲郎,牧原克典,池田弥央,宮崎誠一,櫻井蓉子,高田幸宏,野村 晋太郎,白石賢二 | 少数個の電子で動く未来デバイスの姿 | 第56回応用物理学関係連合講演会 | 1p-ZT-9 | 2009/3 | ||
高田幸宏,村口正和,野村晋太郎,白石賢二 | 電子ガス・量子ドット結合系における電子状態 | 日本物理学会秋季大会 | 21a-YF-11 | 2008/9 | ||
村口正和,高田幸宏,櫻井蓉子,野村晋太郎,斎藤慎一,白石賢二 | 電子ガス−量子ドット結合系における電子ダイナミクス | 日本物理学会秋季大会 | 21a-YF-12 | 2008/9 | ||
村口正和,白石賢二 | 信頼性を支配するトンネル現象に対する新しい理解 | 第69回応用物理学会学術講演会 | 2p-Y-7 | 2008/9 | ||
高田幸宏, 村口正和, 白石賢二 | 絶縁膜に埋め込まれたシリコン量子ドットフローティングゲートへの量子なだれ的多電子注入機構の理論提案 | 第55回応用物理学関係連合講演会 | 27a-P2-7 | 2008/3 | ||
高田幸宏, 村口正和, 白石賢二 | 絶縁膜に埋め込まれた量子ドットフローティングゲートへの多電子注入機構の理論提案 | 第68回応用物理学会学術講演会 | 6a-ZF-1 | 2007/9 | ||
奥西拓馬,村口正和,武田京三郎 | 荷電された量子リングでの電子波束の共鳴トンネル | 日本物理学会春季大会 | 19pRC-8 | 2007/3 | ||
村口正和,奥西拓馬,武田京三郎 | 荷電された量子ドットに入射した電子波束の光支援トンネリング | 日本物理学会春季大会 | 19aTA-6 | 2007/3 | ||
奥西拓馬, 村口正和, 武田京三郎 | 量子リング内へ入射された1電子および2電子波束の動的過程 | 日本物理学会第62回年次大会秋季 | 23pXL-9 | 2006/9 | ||
大塚雄介, 村口正和, 武田京三郎 | 二次元リング型ポテンシャル場に入射された単一電子波束の第一原理動力学 | 第53回応用物理学関係連合講演会 | 24-a-G-2 | 2006/3 | ||
村口正和, 浅利裕介,武田京三郎 | 共鳴トンネル構造内における光電場により変調された電子波のダイナミクス | 第66回応用物理学会学術講演会 | 9p-W-17 | 2005/9 | ||
村口正和, 浅利裕介,武田京三郎 | 2次元閉じこめ場内における電子励起および光励起支援にともなう電子の時間発展 | 日本物理学会第61回年次大会秋季 | 19aYC-8 | 2005/9 | ||
佐竹哲郎、村口正和、浅利祐介、大塚雄介、武田京三郎 | 量子細線内電子波束の時間発展と電気伝導 | 日本物理学会第59回年次大会春季 | 12pPSA-5 | 2004/3 | ||
大塚雄介、村口正和、浅利祐介、佐竹哲郎、武田京三郎 | 2次元ポテンシャル場に束縛された電子の変調外場に対する動的応答 | 日本物理学会第59回年次大会春季 | 12pPSA-6 | 2004/3 | ||
村口正和、浅利祐介、小磯卓児、武田京三郎 | 静電量子レンズによる電子波束の時間発展 | 日本物理学会第59回年次大会春季 | 27pYF-3 | 2004/3 | ||
村口正和、浅利祐介、大塚雄介、佐竹哲郎、渡辺尚貴、武田京三郎 | 2次元放物型量子ドット内電子の振動外場に対する動的応答 | 日本物理学会第59回年次大会春季 | 13pYC-9 | 2004/3 |
著者 | タイトル | 発行元 | 巻 | 号 | ページ | 発表年月日 |
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著者 | タイトル | 発行元 | 巻 | 号 | ページ | 発表年月日 |
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著者 | タイトル | 発行元 | 巻 | 号 | ページ | 発表年月日 |
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著者 | タイトル | 発行元 | 巻 | 号 | ページ | 発表年月日 |
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